Thin films of CuInSe2 have been grown onto glass substrates by stacked elemental layer deposition method in vacuum and the elemental composition of the films measured by proton-induced X-ray emission (PIXE) spectroscopy. The type of electrical conduction, as ascertained by hot-probe as well as Hall coefficient measurements, is interpreted in terms of a tentative defect-formation scheme arising from the deviation of film-stoichiometries, (C) 1999 Elsevier Science Ltd. All rights reserved.
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CONICET Univ Nacl Mar del Plata, Div Corros, INTEMA, Fac Ingn, Mar Del Plata, Buenos Aires, ArgentinaCONICET Univ Nacl Mar del Plata, Div Corros, INTEMA, Fac Ingn, Mar Del Plata, Buenos Aires, Argentina
Valdes, M. H.
Vazquez, M.
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CONICET Univ Nacl Mar del Plata, Div Corros, INTEMA, Fac Ingn, Mar Del Plata, Buenos Aires, ArgentinaCONICET Univ Nacl Mar del Plata, Div Corros, INTEMA, Fac Ingn, Mar Del Plata, Buenos Aires, Argentina
机构:Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela
Essaleh, L
Wasim, SM
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Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, VenezuelaUniv Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela
Wasim, SM
Galibert, J
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机构:Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Merida 5101, Venezuela