Effect of Cl ion implantation on electrical properties of CuInSe2 thin films

被引：16
|
作者：
Tanaka, T [1 ]
Yamaguchi, T
Ohshima, T
Itoh, H
Wakahara, A
Yoshida, A
机构：
[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan
[2] Wakayama Coll Technol, Dept Elect Engn, Gobo 6440023, Japan
[3] Japan Atom Energy Res Inst, Takasaki, Gumma 3701292, Japan
[4] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 1-2期
关键词：
CuInSe2; Cl doping; ion implantation; solar cell; thin film;
D O I：
10.1016/S0927-0248(02)00115-0
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
The effects of Cl ion implantation on the properties of CulnSC(2) epitaxial thin films have been investigated. Using five kinds of accelerating energies, the doped layer with a constant profile of Cl concentration along the depth direction was fabricated. From the results of reflection of high-energy electron diffraction, the damages due to implantation were removed by annealing at 400degreesC in N-2. The conductivity type in all implanted films was n-type, and the carrier concentration was increased with increasing Cl concentration in the thin films. Consequently, it is considered that Cl acts as a donor in CuInSe2. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：109 / 113
页数：5
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