Electrodeposition of Cu-In-Ga thin metal films for Cu(In, Ga)Se2 based solar cells

被引：31
|
作者：
Kois, J. [2 ]
Ganchev, M. [1 ]
Kaelin, M. [3 ]
Bereznev, S. [2 ]
Tzvetkova, E. [1 ]
Volobujeva, O. [2 ]
Stratieva, N. [1 ]
Tiwari, A. N. [3 ,4 ]
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
[2] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia
[3] ETH, Thin Film Phys Grp, CH-8005 Zurich, Switzerland
[4] Univ Loughborough, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England
来源：
THIN SOLID FILMS | 2008年 / 516卷 / 18期
关键词：
electrochemistry; depth profiling; copper-indium-selenides; solar cells;
D O I：
10.1016/j.tsf.2007.10.080
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu-In-Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Gacontent is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 degrees C in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se(2) films are discussed. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：5948 / 5952
页数：5
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