Study of Cu-In-Ga precursor for Cu(In,Ga)Se2 thin film prepared by the two-stage process

被引：4

作者：

Liu, Jiang ^{[1
]}

Zhuang, Da-Ming ^{[1
]}

Luan, He-Xin ^{[1
]}

Xie, Min ^{[1
]}

Li, Xiao-long ^{[1
]}

Cao, Ming-Jie ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mech Engn, Beijing 100084, Peoples R China

来源：

JOURNAL OF MATERIALS RESEARCH | 2012年 / 27卷 / 20期

关键词：

SOLAR-CELLS; SELENIZATION;

D O I：

10.1557/jmr.2012.204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu-In-Ga precursor thin films were deposited onto soda lime glass by magnetron cosputtering CuIn and CuGa alloy targets. After that, Cu(In,Ga)Se-2 (CIGSe) absorbers were formed by selenizing those alloy precursors with Se vapor at 550 degrees C. The influence of the precursor temperature on the properties of CIGSe thin film was investigated. The results show that a lot of pinholes existed in the CIGSe thin film produced by selenizing the Cu-In-Ga alloy precursor, which was sputtering deposited at ambient temperature. After sputtering substrate temperature of 250 degrees C was applied, pinholes were avoided. The surface roughness of Cu-In-Ga precursor increased with the increase of sputtering substrate temperature. Due to the volume expansion of selenization process, even the precursor with high surface roughness could be converted to smooth and compact CIGSe thin film.

引用

页码：2639 / 2643

页数：5

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