Electrodeposition of Cu-In-Ga thin metal films for Cu(In, Ga)Se2 based solar cells

被引：31

作者：

Kois, J. ^{[2
]}

Ganchev, M. ^{[1
]}

Kaelin, M. ^{[3
]}

Bereznev, S. ^{[2
]}

Tzvetkova, E. ^{[1
]}

Volobujeva, O. ^{[2
]}

Stratieva, N. ^{[1
]}

Tiwari, A. N. ^{[3
,4
]}

机构：

[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

[2] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia

[3] ETH, Thin Film Phys Grp, CH-8005 Zurich, Switzerland

[4] Univ Loughborough, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 18期

关键词：

electrochemistry; depth profiling; copper-indium-selenides; solar cells;

D O I：

10.1016/j.tsf.2007.10.080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu-In-Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Gacontent is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 degrees C in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se(2) films are discussed. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：5948 / 5952

页数：5

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