Preparation of Cu(In,Ga)Se2 thin films by pulse electrodeposition

被引：31
|
作者：
Liu, Fangyang [1 ]
Huang, Chun [1 ]
Lai, Yanqing [1 ]
Zhang, Zhian [1 ]
Li, Jie [1 ]
Liu, Yexiang [1 ]
机构：
[1] Cent S Univ, Sch Met Sci & Engn, Changsha 410083, Hunan, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2011年 / 509卷 / 08期
关键词：
Cu(In; Ga)Se-2; Thin films; Pulse electrodeposition; Duty cycle; Nucleation and growth; CUINSE2; GROWTH; ELECTROCRYSTALLIZATION; DEPOSITION;
D O I：
10.1016/j.jallcom.2010.12.031
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Cu(In,Ga)Se-2 thin films were prepared from aqueous solution by pulse electrodeposition. It was found that the co-deposition of the species occurred under a 3D growth with instantaneous nucleation. The morphology of the pulse-electrodeposited film can be improved by adjusting the duty cycle. The significant loss of indium and reduction of In-Se compound(s) accordingly were observed with decrease of duty cycle. Chalcopyrite structure Cu(In,Ga)Se-2 films with p-type behavior and enhancement in crystallinity were obtained after annealing treatment in Ar atmosphere. (c) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：L129 / L133
页数：5
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