A Balanced CMOS OpAmp with High EMI Immunity

被引：0
|
作者：
Subrahmanyam, Boyapati [1 ]
Das, Devarshi [2 ]
Baghini, Maryam Shojaei [2 ]
Redoute, Jean-Michel [3 ]
机构：
[1] Indian Inst Technol, IITB Monash Res Acad, Bombay, Maharashtra, India
[2] Indian Inst Technol, Dept Elect Engn, Bombay, Maharashtra, India
[3] Monash Univ, Dept Elect & Comp Syst Engn, Clayton, Vic 3168, Australia
来源：
2014 INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY (EMC EUROPE) | 2014年
关键词：
CMOS; electromagnetic interference immunity; operational amplifier; OPERATIONAL-AMPLIFIERS; INTERFERENCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper a balanced CMOS operational amplifier which has higher electromagnetic interference (EMI) immunity compared to a double differential amplifier and standard Miller operational amplifier, has been introduced. The proposed amplifier has better EMI immunity, from 1 MHz - 1 GHz, by keeping specifications such as gain, - 3 dB bandwidth, phase margin, power supply rejection and unity gain frequency same as in the Miller operational amplifier. Analysis and simulation results are compared when an EMI signal of 1.1 Vpp applied at the input terminal. The simulation results show that the EMI-induced offset voltage is lesser over a wide range of frequencies for the proposed amplifier.
引用
收藏
页码：703 / 708
页数：6
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