Design of a CMOS opamp input stage immune to EMI

被引:1
|
作者
Fiori, F [1 ]
Crovetti, PS [1 ]
机构
[1] Politecn Torino, Dept Elect, Turin, Italy
关键词
D O I
10.1080/00207210310001595356
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper the behaviour of a complementary nMOS-pMOS differential pair in the presence of RF interference superimposed on the input terminals is analysed. An intrinsic nonlinearity cancellation mechanism in this structure is demonstrated, and proper design criteria are presented to exploit this mechanism in order to achieve a very high immunity to RF interference. A high-immunity complementary differential pair has been employed as an input stage of a folded cascode operational amplifier and its improved behaviour in the presence of RF interference has been verified by computer simulations.
引用
收藏
页码:99 / 108
页数:10
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