Bulk-Driven CMOS Amplifier With High EMI Immunity

被引：11

作者：

Li, Hong Ge ^{[1
]}

Bai, Hui Xin ^{[1
]}

Xie, Shu Guo ^{[1
]}

Su, Dong Lin ^{[1
]}

机构：

[1] Beihang Univ, Sch Elect & Informat Engn, Beijing 100191, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY | 2015年 / 57卷 / 06期

关键词：

CMOS bulk-driven; dc offset; electromagnetic interference (EMI) immunity; low-voltage bioamplifier; OPAMP; SUSCEPTIBILITY;

D O I：

10.1109/TEMC.2015.2458985

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a bulk-driven CMOS amplifier with high immunity to electromagnetic interference (EMI). The approach is based on a bulk-driven input stage of MOSFET, thereby providing a low-voltage realization of a gate-driven stage. The bulk-driven amplifier includes the positive feedback, an input voltage drop, and dual input-stage symmetrical topology to improve the equivalent transconductance, dc linearity, and ac performance. As demonstrated by the measurements, the dc offset of the proposed amplifier is less than 70 mV, the measured PSD is about -66 dBm with 1 -V-pp EMI conveyed. The amplifier chip is implemented using a 0.35 mu m standard CMOS process with a 1-V power supply.

引用

页码：1425 / 1434

页数：10

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