EMI susceptibility in bulk-driven Miller opamp

被引：12
|
作者：
Sbaraini, S. [1 ]
Richelli, A. [1 ]
Kovacs-Vajna, Zs. M. [1 ]
机构：
[1] Univ Brescia, Dept Informat Engn, I-25123 Brescia, Italy
来源：
ELECTRONICS LETTERS | 2010年 / 46卷 / 16期
关键词：
OPERATIONAL-AMPLIFIERS; INPUT STAGE; CMOS OPAMP; DESIGN;
D O I：
10.1049/el.2010.1029
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple bulk-driven Miller amplifier is proposed. Along with the main operational amplifier (opamp) characteristics, the EMI susceptibility has also been investigated. The common nonlinearity problem of bulk-driven opamp architectures has been investigated and solved. The solution reduces also the EMI susceptibility. The proposed opamp has been designed in a 0.35 mu m standard CMOS process; it is supplied by 1 V, it exhibits a gain of 90 dB, a gain-bandwidth product of 113 kHz, a power consumption of 8.4 mu W and a high EMI robustness.
引用
收藏
页码：1111 / 1112
页数：2
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