Microstructure and energy-storage performance of PbO-B2O3-SiO2-ZnO glass added (Pb0.97La0.02)(Zr0.97Ti0.03)O3 antiferroelectric thick films

被引：27
|
作者：
Hao, Xihong [1 ,2 ]
Wang, Peng [2 ]
Zhang, Xuefeng [1 ]
Xu, Jinbao [3 ]
机构：
[1] Lab Integrated Exploitat Bayan Obo Multimetal Res, Baotou 014010, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
[3] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Xinjiang Key Lab Elect Informat Mat & Devices, Urumqi 830011, Peoples R China
来源：
MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 01期
基金：
中国国家自然科学基金;
关键词：
Electronic materials; Electrical properties; Energy storage; DIELECTRIC-PROPERTIES; TITANATE; DENSIFICATION; DENSITY;
D O I：
10.1016/j.materresbull.2012.10.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, Pb0.97La0.02(Zr0.97Ti0.03)O-3 (PUT 2/97/3) antiferroelectric (AFE) thick films with 0-5 wt.% PbO-B2O3-SiO2-ZnO glass addition were successfully fabricated on alumina substrates via a screen printing method. The effects of the added glass on the microstructure, the dielectric properties, and the energy-storage performance of the PLZT 2/97/3 AFE thick films were investigated in detail. The results showed that the proper addition of glass powders was favor to form a denser microstructure with a pure perovsike phase. As a result, the dielectric properties and the energy-storage performance of AFE thick films were greatly improved by the addition of glass. The maximum recoverable energy-storage density of 3.1 J/cm(3) was obtained in 3-wt.% glass-added AFE thick films. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：84 / 88
页数：5
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