A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology

被引：35
|
作者：
Kuo, Jing-Lin [1 ]
Tsai, Zlio-Min
Lin, Kun-You
Wang, Huei
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2009年 / 19卷 / 01期
关键词：
Broadband; CMOS; microwave monolithic integrated circuit (MMIC); power amplifier (PA); 60; GHz; V-band;
D O I：
10.1109/LMWC.2008.2008603
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured P-sat of 13.8 dBm, P-1 d B of 10.3 dBm, power added efficiency (PAE) or 12.6%, and linear power gain of 30 dB at 60 GHz under V-DD biased at 1.8 V. When V-DD is biased at 3 V, it exhibits P-sat of 18 dBm, P-1 d B of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70GHz, with a chip size of 0.66 x 0.5 mm(2). To the author's knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.
引用
收藏
页码：45 / 47
页数：3
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