Design and Fabrication of 3300V/30A 4H-SiC JBS Diode

被引：0

作者：

Chen Zheng ^{[1
]}

Yang Tongtong ^{[1
]}

Huang Runhua ^{[1
]}

Wang Ling ^{[1
]}

Chen Guran ^{[1
]}

Yang Lijie ^{[1
]}

Bai Song ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, State Key Lab Wide Bandgap Semicond Power Elect D, Nanjing 210016, Jiangsu, Peoples R China

来源：

2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS) | 2017年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The design, fabrication and characterization of a SiC 3300V/30A JBS diode have been presented. The field limiting rings(FLR) termination has been used in the fabrication. Numerical simulations have been performed for the optimal parameters of the FLR technique. A doping of 2.7e15cm(-3) and a thickness of 33 mu m is finally utilized for the drift layer. With 40 rings in the FLR termination, a typical breakdown voltage of 3600V has been achieved. And a forward current of 30A is obtained when the diode is forwardly biased at 2.1V. [GRAPHICS] .

引用

页码：148 / 151

页数：4

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