Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition

被引：5

作者：

Park, J. S. ^{[1
]}

Moon, Yong-Tae ^{[2
]}

Kim, Dong-Joon ^{[3
]}

Park, Nae-Man ^{[4
]}

Yao, T. ^{[1
]}

Park, Seong-Ju ^{[5
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] LG Elect Inst Technol, Seoul 137724, South Korea

[3] Samsung Electromech Co Ltd, Suwon 442743, South Korea

[4] Elect & Telecommun Res Inst, Taejon 3057, South Korea

[5] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 16期

基金：

日本学术振兴会;

关键词：

D O I：

10.1088/0022-3727/41/16/165103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium predeposition prior to the growth of InGaN well layers was found to significantly improve the optical properties of InGaN/GaN multiple quantum wells (MQWs). photoluminescence and ultraviolet-visible absorption spectroscopy measurements showed a remarkable decrease in the Stokes shift with increasing indium predeposition time. High resolution x-ray diffraction measurements revealed a significant improvement in the interface quality of the MQWs. These results indicate that indium predeposition improves the uniformity of the indium composition in InGaN well layers, resulting in the formation of nearly perfect square potential wells in MQWs.

引用

页数：4

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