Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template

被引：3

作者：

Zhang, Shiying ^{[1
,2
,3
]}

Xiu, Xiangqian ^{[1
]}

Wang, Hengyuan ^{[1
]}

Xu, Qingjun ^{[1
,2
]}

Wu, Zhenlong ^{[1
,3
]}

Hua, Xuemei ^{[1
]}

Chen, Peng ^{[1
,3
]}

Xie, Zili ^{[1
]}

Liu, Bin ^{[1
]}

Zhou, Yugang ^{[1
]}

Han, Ping ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] Zaozhuang Univ, Coll Optoelect Engn, Zaozhuang 277160, Peoples R China

[3] Nanjing Univ & Yangzhou, Inst Optoelect, Yangzhou 225009, Jiangsu, Peoples R China

来源：

MATERIALS LETTERS | 2016年 / 180卷

基金：

中国国家自然科学基金;

关键词：

Semiconductor; Epitaxial growth; Optical materials and properties; PIEZOELECTRIC FIELDS;

D O I：

10.1016/j.matlet.2016.05.174

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The InGaN/GaN multiple quantum wells (MQWs) with truncated pyramid structure have been successfully epitaxially grown on the GaN hexagonal pyramids template through a simple and low-cost etch-regrown process. GaN hexagonal pyramids template was contained by a convenient photo-assisted chemical (PAC) etching method. The truncated pyramids are composed of {10 (1) over bar(1) over bar} and {11 (2) over bar2} semi-polar facets as well as (0001) polar facet. It was observed that the InGaN/GaN MQWs substantially emitted broad spectrum with multiple peaks by room temperature photoluminescence (PL). The cathodoluminescence of MQWs red-shifts as the location moves from bottom to top on the facets due to the indium diffusion mechanism. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：298 / 301

页数：4

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