Epitaxy and optical properties of InGaN/GaN multiple quantum wells on GaN hexagonal pyramids template

被引：3
|
作者：
Zhang, Shiying [1 ,2 ,3 ]
Xiu, Xiangqian [1 ]
Wang, Hengyuan [1 ]
Xu, Qingjun [1 ,2 ]
Wu, Zhenlong [1 ,3 ]
Hua, Xuemei [1 ]
Chen, Peng [1 ,3 ]
Xie, Zili [1 ]
Liu, Bin [1 ]
Zhou, Yugang [1 ]
Han, Ping [1 ]
Zhang, Rong [1 ]
Zheng, Youdou [1 ]
机构：
[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[2] Zaozhuang Univ, Coll Optoelect Engn, Zaozhuang 277160, Peoples R China
[3] Nanjing Univ & Yangzhou, Inst Optoelect, Yangzhou 225009, Jiangsu, Peoples R China
来源：
MATERIALS LETTERS | 2016年 / 180卷
基金：
中国国家自然科学基金;
关键词：
Semiconductor; Epitaxial growth; Optical materials and properties; PIEZOELECTRIC FIELDS;
D O I：
10.1016/j.matlet.2016.05.174
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The InGaN/GaN multiple quantum wells (MQWs) with truncated pyramid structure have been successfully epitaxially grown on the GaN hexagonal pyramids template through a simple and low-cost etch-regrown process. GaN hexagonal pyramids template was contained by a convenient photo-assisted chemical (PAC) etching method. The truncated pyramids are composed of {10 (1) over bar(1) over bar} and {11 (2) over bar2} semi-polar facets as well as (0001) polar facet. It was observed that the InGaN/GaN MQWs substantially emitted broad spectrum with multiple peaks by room temperature photoluminescence (PL). The cathodoluminescence of MQWs red-shifts as the location moves from bottom to top on the facets due to the indium diffusion mechanism. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：298 / 301
页数：4
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