Focused ion beam analysis technology (invited)

被引：0

作者：

Wang, JJ ^{[1
]}

Chang, X ^{[1
]}

Zong, XF ^{[1
]}

机构：

[1] Fudan Univ, Natl Microanal Ctr, Shanghai 200433, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the last decade, focused ion beam (FIB) technology has been attracting attention as a tool with submicron fabrication capabilities because of increasing circuit density and decreasing feature dimension in VLSI devices. This paper introduces basic FIB functions and a number of its technological applications in the field of microelectronics such as microscopic cross-sectioning, trans mission electron microscopy (TEM) sample preparation. microcircuit repair and Al microstructure observation. Several examples are presented for these applications.

引用

页码：311 / 314

页数：4

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