Two-tone characterization of high-power modified uni-traveling carrier photodiode

被引：4
|
作者：
Beling, A. [1 ]
Pan, H. [1 ]
Chen, H. [1 ]
Campbell, J. C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
来源：
2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/LEOS.2007.4382442
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The two-tone third-order intermodulation distortions of an InGaAs/InP modified charge compensated uni-traveling carrier photodiode with both absorbing and non-absorbing depleted region are characterized. Around 12GRz modulation frequency, the third-order intercept point is > 40 dBm over a wide range of photocurrents.
引用
收藏
页码：389 / 390
页数：2
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