Photoresponse characteristics from computationally efficient dynamic model of uni-traveling carrier photodiode

被引：0
|
作者：
Khanra, Senjuti [1 ,2 ]
Das Barman, Abhirup [1 ]
机构：
[1] Univ Calcutta, Inst Radio Phys & Elect, 92 Acharya Prafulla Chandra Rd, Kolkata 700009, W Bengal, India
[2] IRPE CU, ITRA Project Mobile Broadband Serv Support Cognit, Kolkata, India
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2016年 / 48卷 / 02期
关键词：
Carrier density; Responsivity; Photodiodes; INDIUM-PHOSPHIDE;
D O I：
10.1007/s11082-015-0368-y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A time domain model of bulk InGaAs/InP uni-traveling carrier photodiode is developed in terms of coupled differential equations of incident photon flux and photo generated carrier density rates. For fast computation of model parameters linear approximation of material absorption coefficient is made with carrier density. Wavelength and bias voltage dependent responsivity is well demonstrated by the model and their values at different absorption layer widths agree well with the experimental results. Optical power induced output photocurrent saturation is also explained. Furthermore, from the temporal variation of output photocurrent, estimation of device bandwidth is shown.
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页码：1 / 11
页数：11
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