Influence of confinement on biexciton binding in semiconductor quantum dot ensembles measured with two-dimensional spectroscopy

被引：49

作者：

Moody, G. ^{[1
,2
,3
]}

Singh, R. ^{[1
,2
,3
]}

Li, H. ^{[1
,2
]}

Akimov, I. A. ^{[4
,5
]}

Bayer, M. ^{[4
]}

Reuter, D. ^{[6
]}

Wieck, A. D. ^{[6
]}

Bracker, A. S. ^{[7
]}

Gammon, D. ^{[7
]}

Cundiff, S. T. ^{[1
,2
,3
]}

机构：

[1] Univ Colorado, JILA, Boulder, CO 80309 USA

[2] Natl Inst Stand & Technol, Boulder, CO 80309 USA

[3] Univ Colorado, Dept Phys, Boulder, CO 80309 USA

[4] Tech Univ Dortmund, D-44221 Dortmund, Germany

[5] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[6] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

[7] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 04期

关键词：

FOURIER-TRANSFORM SPECTROSCOPY;

D O I：

10.1103/PhysRevB.87.041304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The emission energy dependence of the biexciton binding energy is investigated in three semiconductor quantum dot (QD) systems that exhibit different quantum well -> QD confinement. Using two-dimensional Fourier-transform spectroscopy, we demonstrate that in strongly confining InAs QDs, the binding energy is independent of exciton emission energy and fluctuations in the ground state -> exciton transition energy are strongly correlated with those of the exciton -> biexciton. In contrast, the biexciton binding energy increases with emission energy in weakly confining interfacial GaAs QDs, and the level of correlation of exciton-biexciton broadening is reduced. A comparison with simulations reveals the significance of the strength and nature of confinement on Coulomb interactions responsible for biexciton renormalization. DOI: 10.1103/PhysRevB.87.041304

引用

页数：5

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