III-Nitride Heterojunction FETs : Future Perspectives

被引：0
|
作者：
Kuzuhara, Masaaki [1 ]
机构：
[1] Univ Fukui, Grad Sch Engn, Fukui 9108507, Japan
来源：
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
III-nitride electron devices are attracting considerable attention for future wireless communication equipments and power electronics systems. This paper gives an overview on the state-of-the-art performance of AlGaN/GaN heterojunction FETs and describes some key issues concerning further improvements in the device performance. Focus is also on the future perspectives of III-nitride-based transistor applications.
引用
收藏
页码：461 / 464
页数：4
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