Surface Passivation Effects on AlGaN/GaN High Electron Mobility Transistors with SiO2

被引：2

作者：

Gassoumi, Malek ^{[1
,2
]}

Gaquiere, Christophe ^{[3
]}

Maaref, Hassen ^{[1
]}

机构：

[1] Fac Sci Monastir, Lab Microoptoelect & Nanostruct, Monastir, Tunisia

[2] Univ Monasti, Monastir 5000, Tunisia

[3] Univ Sci & Technol Lille, IEMN, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France

来源：

SENSOR LETTERS | 2011年 / 9卷 / 06期

关键词：

Passivated; SiO2; AlGaN/GaN HEMT; CDLTS; Traps;

D O I：

10.1166/sl.2011.1787

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) using SiO2 formed by plasma enhanced chemical vapor deposition. We discuss the role and the influence of passivation on the device performance and characteristics. An increase of I-Dmax and g(mmax) has been observed on the passivated (SiO2) HEMTs when compared with the unpassivated HEMTs. An improvement of F-T, F-max and device output power P-out was also observed after surface passivation. A good correlation is observed between pulsed and power measurements.

引用

页码：2175 / 2177

页数：3

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