Microwave performance of AlGaN/GaN high-electron-mobility transistors on Si/SiO2/Poly-SiC substrates

被引：3

作者：

Anderson, T. J. ^{[1
]}

Ren, F. ^{[1
]}

Kim, J. ^{[2
]}

Lin, J. ^{[2
]}

Hlad, M. ^{[3
]}

Gila, B. P. ^{[3
]}

Voss, L. ^{[3
]}

Pearton, S. J. ^{[3
]}

Bove, P. ^{[4
]}

Lahreche, H. ^{[4
]}

Thuret, J. ^{[4
]}

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Picogiga Int SAS, F-91971 Courtaboeuf, France

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2008年 / 37卷 / 04期

关键词：

wide bandgap; GaN; HEMT;

D O I：

10.1007/s11664-007-0326-y

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiofrequency (RF) performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) on Si-on-poly-SiC (SopSiC) substrates formed by the Smart-Cut(TM)supercript stop process is reported. This provides a low-cost, high-thermal-conductivity substrate for power applications. HEMTs with a 0.5 mu m gate length show cutoff frequencies (f(T)) of 18 to 27 GHz for gate-to-drain distances of 3 to 32 mu m and a maximum frequency of oscillation (f(max)) of 43 to 47 GHz. The f(max) values are slightly lower than comparable devices on sapphire, SiC or Si alone. This approach looks promising for applications requiring cheap large-area substrates and better thermal management than provided by pure Si substrates alone.

引用

页码：384 / 387

页数：4

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