Surface Passivation Effects on AlGaN/GaN High Electron Mobility Transistors with SiO2

被引：2
|
作者：
Gassoumi, Malek [1 ,2 ]
Gaquiere, Christophe [3 ]
Maaref, Hassen [1 ]
机构：
[1] Fac Sci Monastir, Lab Microoptoelect & Nanostruct, Monastir, Tunisia
[2] Univ Monasti, Monastir 5000, Tunisia
[3] Univ Sci & Technol Lille, IEMN, Dept Hyperfrequences & Semicond, F-59652 Villeneuve Dascq, France
来源：
SENSOR LETTERS | 2011年 / 9卷 / 06期
关键词：
Passivated; SiO2; AlGaN/GaN HEMT; CDLTS; Traps;
D O I：
10.1166/sl.2011.1787
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Surface passivation effects were studied on AlGaN/GaN high-electron-mobility transistors (HEMTs) using SiO2 formed by plasma enhanced chemical vapor deposition. We discuss the role and the influence of passivation on the device performance and characteristics. An increase of I-Dmax and g(mmax) has been observed on the passivated (SiO2) HEMTs when compared with the unpassivated HEMTs. An improvement of F-T, F-max and device output power P-out was also observed after surface passivation. A good correlation is observed between pulsed and power measurements.
引用
收藏
页码：2175 / 2177
页数：3
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