SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional schottky gate

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School of Electrical Engineering and Computer Science, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea, Republic of [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 4 B卷 / 2291-2295期
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Dual-gates - Passivation effects - Schottky gates - Surface trap states;
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