245 GHz subharmonic receiver in SiGe

被引：0
|
作者：
Mao, Yanfei [1 ]
Schmalz, K. [1 ]
Borngraeber, J. [1 ]
Scheytt, J. C. [2 ]
机构：
[1] IHP GmbH, Circuit Design Dept, D-15236 Frankfurt, Oder, Germany
[2] Univ Paderborn, Syst & Circuit Technol, D-33102 Paderborn, Germany
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
SiGe technology; millimeter-wave circuits; 245; GHz; CB LNA; SHM; VCO; sub-harmonic receiver;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A subharmonic receiver for sensing applications in the 245 GHz ISM band has been proposed. The receiver consists of a single-ended common base LNA, a 60 GHz push-push VCO with 1/32 divider, a transconductance 4th subharmonic mixer and IF amplifier. The receiver is fabricated in f(T)/f(max)=300/500 GHz SiGe: C BiCMOS technology. Its measured single-ended gain is 21 dB at 243 GHz with tuning range of 12 GHz, and the single-side band noise figure is 32 dB. The input 1-dB compression point is at -37 dBm. The receiver dissipates a power of 358 mW.
引用
收藏
页码：183 / 186
页数：4
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