Strong excitation intensity dependence of the photoluminescence line shape in GaAs1-xBix single quantum well samples

被引：16

作者：

Mazur, Yu. I. ^{[1
]}

Dorogan, V. G. ^{[1
]}

Schmidbauer, M. ^{[2
]}

Tarasov, G. G. ^{[3
]}

Johnson, S. R. ^{[4
]}

Lu, X. ^{[4
]}

Ware, M. E. ^{[1
]}

Yu, S. -Q. ^{[5
]}

Tiedje, T. ^{[6
]}

Salamo, G. J. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

[2] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[3] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine

[4] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[5] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

[6] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8W 3P6, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 14期

基金：

美国国家科学基金会;

关键词：

GROWTH;

D O I：

10.1063/1.4801429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A set of high quality single quantum well samples of GaAs1-xBix with bismuth concentrations not exceeding 6% and well widths ranging from 7.5 to 13 nm grown by molecular beam epitaxy on a GaAs substrate at low temperature is studied by means of photoluminescence (PL). It is shown that the PL line shape changes when the exciton reduced mass behavior changes from an anomalous increase (x < 5%) to a conventional decrease (x > 5%). Strongly non-monotonous PL bandwidth dependence on the excitation intensity is revealed and interpreted in terms of optically unresolved contributions from the saturable emission of bound free excitons. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4801429]

引用

页数：5

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