Growth of GaAs1-xBix/AlyGa1-yAs Multi-Quantum-Well Structures

被引：4
|
作者：
Fuyuki, Takuma [1 ]
Tominaga, Yoriko [1 ]
Oe, Kunishige [1 ]
Yoshimoto, Masahiro [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 07期
基金：
日本学术振兴会;
关键词：
MOLECULAR-BEAM EPITAXY; SEMICONDUCTOR ALLOY GAAS1-XBIX;
D O I：
10.1143/JJAP.49.070211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs1-xBix/AlyGa1-yAs (0 < x < 0.05, 0 < y < 0.26) multi-quantum-wells (MQWs) have been successfully grown by molecular-beam epitaxy. The intensity oscillation and streaky patterns of in situ reflection high-energy electron diffraction suggested the layer-by-layer growth of GaAs1-xBix/AlyGa1-yAs MQWs. Clear satellite peaks attributed to periodical structures were observed in high-resolution X-ray diffraction measurements. The cross-sectional transmission microscopy images and secondary-ion mass spectrometry depth profile showed that GaAs1-xBix/AlyGa1-yAs MQWs with a smooth interface can be fabricated without distinct segregation. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页码：0702111 / 0702113
页数：3
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