Influence of hydrogen impurities on p-type resistivity in Mg-doped GaN films

被引：10

作者：

Yang, Jing ^{[1
]}

Zhao, Degang ^{[1
]}

Jiang, Desheng ^{[1
]}

Chen, Ping ^{[1
]}

Zhu, Jianjun ^{[1
]}

Liu, Zongshun ^{[1
]}

Le, Lingcong ^{[1
]}

He, Xiaoguang ^{[1
]}

Li, Xiaojing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2015年 / 33卷 / 02期

基金：

中国国家自然科学基金;

关键词：

AMBIENT; DISSOCIATION; ACTIVATION;

D O I：

10.1116/1.4904035

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of hydrogen impurities on p-type resistivity in Mg-doped GaN films were investigated. It was found that hydrogen impurities may have the dual role of passivating Mg-Ga acceptors and passivating donor defects. A decrease in p-type resistivity when O-2 is introduced during the postannealing process is attributed to the fact that annealing in an O-2-containing environment can enhance the dissociation of Mg-Ga-H complexes as well as the outdiffusion of H atoms from p-GaN films. However, low H concentrations are not necessarily beneficial in Mg-doped GaN films, as H atoms may also be bound at donor species and passivate them, leading to the positive effect of reduced compensation. (C) 2014 American Vacuum Society.

引用

页数：4

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