Phase change memory cell based on Sb2Te3/TiN/Ge2Sb2Te5 sandwich-structure

被引：11
|
作者：
Rao, Feng [1 ]
Song, Zhitang [1 ]
Wu, Liangcai [1 ]
Gong, Yuefeng [1 ]
Feng, Songlin [1 ]
Chen, Bomy [2 ]
机构：
[1] Chinese Acad Sci, Nanotechnol Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA
来源：
SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 03期
关键词：
Ge2Sb2Te5; Phase change memory; Sb2Te3; TiN;
D O I：
10.1016/j.sse.2008.12.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Four nm thick TiN film was inserted between Sb2Te3 and Ge2Sb2Te5 films in conventional doublelayer phase change memory cell. The novel sandwich-structure phase change memory cell was still able to show triple level data storage ability. Interdiffusion between Sb2Te3 and Ge2Sb2Te5 films is suppressed by this TiN layer. Compared with conventional doublelayer phase change memory cell, smooth resistance stages with more consistent resistance magnitudes and better data endurance characteristics of all resistance states have been achieved on the sandwich-structure phase change memory cell. (C) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：276 / 278
页数：3
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