Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-ray Microbeam Diffraction

被引：1
|
作者：
Shimura, Takayoshi [1 ]
Matsumiya, Takuya [1 ]
Morimoto, Naoki [1 ]
Hosoi, Takuji [1 ]
Kajiwara, Kentaro [2 ]
Chen, Jun [3 ]
Sekiguchi, Takashi [3 ]
Watanabe, Heiji [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan
[2] Japan Synchrotron Radiat Res Inst, Hyogo 6795198, Japan
[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
来源：
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷
关键词：
Multicrystalline silicon; Synchrotron radiation; Grain boundary; X-ray microbeam; Lattice strain; X-ray topography; GRAIN-BOUNDARIES; BEAM;
D O I：
10.4028/www.scientific.net/MSF.725.153
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A synchrotron white x-ray microbeam diffraction method was employed to investigate lattice distortion in multicrystalline silicon for photovoltaic cells. The measurements were carried out by scanning the sample, and transmission Laue patterns were observed at each position on the sample. Intensity and position maps of the Laue spots showed the distribution of the crystalline quality of the grains and the bending of the lattice planes. Strain and bending distributions were extracted from an analysis of Laue spots at diagonal positions, and these were compared with those obtained by other techniques.
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收藏
页码：153 / +
页数：2
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