Photochemical wet etching of silicon by synchrotron white X-ray radiation

被引：3
|
作者：
Cho, I. H.
Kim, D. H.
Ha, S. B.
Noh, D. Y. [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Korea Elect Power Res Inst, Taejon 305380, South Korea
来源：
THIN SOLID FILMS | 2007年 / 515卷 / 14期
关键词：
synchrotron X-ray; photochemistry; porous silicon; electropolishing;
D O I：
10.1016/j.tsf.2006.12.127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated photochemical wet etching of n-type silicon (100) using synchrotron white X-ray radiation. During electroless photochemical wet etching under high flux white X-ray beam, the surface is electropolished. However, when the photon is reduced, the silicon surface becomes porous instead. The pore formation is greatly enhanced when an external potential is applied through a Pt counter electrode. The porous silicon layer exhibits strong photoluminescence signal. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：5736 / 5740
页数：5
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