Modeling the temperature-dependent early voltage of a silicon germanium heterojunction bipolar transistor

被引：1
|
作者：
Wartenberg, SA [1 ]
Westgate, CR [1 ]
机构：
[1] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期
关键词：
device characterization; device modeling; early voltage; heterojunction bipolar transistor; isothermal; pulsed; silicon germanium;
D O I：
10.1109/16.766886
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT, The expression includes two fit factors, one for the Si1-xGex alloy and the other for the nonuniform doping density. The fit factors are functions of the device temperature and are determined through pulsed bias measurements.
引用
收藏
页码：1207 / 1211
页数：5
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