ESD investigation of pn junction diodes in silicon-germanium heterojunction bipolar transistor

被引：1
|
作者：
Chou, CH
Chen, SS
Tang, TH
机构：
[1] Providence Univ, Div Teacher Educ, Taichung, Taiwan
[2] United Microelect Corp, Cent R&D Div, Dept Device Engn, Hsinchu, Taiwan
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 14期
关键词：
D O I：
10.1049/el:20030677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrostatic discharge (ESD) characteristics of the pn junction diodes with different configurations in a silicon-germanium hetero-junction bipolar transistor (SiGe HBT) based on a 0.18 mum SiGe BiCMOS process is investigated. From the measured results, for the thin-base SiGe HBT, the base-collector junction diode shows the best ESD performance among all kinds of diode configurations owing to its large junction area.
引用
收藏
页码：1089 / 1091
页数：3
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