ESD investigation of pn junction diodes in silicon-germanium heterojunction bipolar transistor

被引：1
|
作者：
Chou, CH
Chen, SS
Tang, TH
机构：
[1] Providence Univ, Div Teacher Educ, Taichung, Taiwan
[2] United Microelect Corp, Cent R&D Div, Dept Device Engn, Hsinchu, Taiwan
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 14期
关键词：
D O I：
10.1049/el:20030677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrostatic discharge (ESD) characteristics of the pn junction diodes with different configurations in a silicon-germanium hetero-junction bipolar transistor (SiGe HBT) based on a 0.18 mum SiGe BiCMOS process is investigated. From the measured results, for the thin-base SiGe HBT, the base-collector junction diode shows the best ESD performance among all kinds of diode configurations owing to its large junction area.
引用
收藏
页码：1089 / 1091
页数：3
相关论文
共 50 条
  • [31] Simulation of effects of emitter and collector widths on performance of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs)
    Khadir, A.
    Sengouga, N.
    Kouzou, A.
    Abdelhafidi, M. K.
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (02) : 682 - 688
  • [32] Emitter scaling dependence of mixed-mode reliability degradation in silicon-germanium heterojunction bipolar transistors
    Lee, Seung-Yun
    Zhu, Chendong
    Cressler, John D.
    Lee, Sang-Heung
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (07) : 5309 - 5313
  • [33] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
    魏佳男
    李洋
    廖文龙
    刘方
    李永宏
    刘建成
    贺朝会
    郭刚
    ChinesePhysicsB, 2022, 31 (08) : 473 - 478
  • [34] 50 MeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature
    Hegde, Vinayakprasanna N.
    Praveen, K.C.
    Pradeep, T.M.
    Cressler, John D.
    Prakash, A.P. Gnana
    Microelectronics Reliability, 2022, 137
  • [35] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
    Wei, Jianan
    Li, Yang
    Liao, Wenlong
    Liu, Fang
    Li, Yonghong
    Liu, Jiancheng
    He, Chaohui
    Guo, Gang
    CHINESE PHYSICS B, 2022, 31 (08)
  • [36] 50 MeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature
    Hegde, Vinayakprasanna N.
    Praveen, K. C.
    Pradeep, T. M.
    Cressler, John D.
    Prakash, A. P. Gnana
    MICROELECTRONICS RELIABILITY, 2022, 137
  • [37] The influence of process and design of subcollectors on the ESD robustness of ESD structures and silicon germanium heterojunction bipolar transistors in a BiCMOS SiGe technology
    Voldman, SH
    Lanzerotti, L
    Ronan, B
    Onge, SS
    Dunn, J
    41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, : 347 - 356
  • [38] Silicon-Germanium Heterojunction Photodetectors for On-Chip Optoelectronics and Communications
    Benedikovic, Daniel
    Virot, Leopold
    Aubin, Guy
    Hartmann, Jean-Michel
    Amar, Farah
    Le Roux, Xavier
    Alonso-Ramos, Carlos
    Marris-Morini, Delphine
    Cassan, Eric
    Boeuf, Frederic
    Fedeli, Jean-Marc
    Szelag, Bertrand
    Vivien, Laurent
    2021 IEEE 17TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP 2021), 2021,
  • [39] Investigation of Silicon-Germanium Nanowires THz Emission
    Balci, Soner
    Lee, Woo-Jung
    Wilbert, David S.
    Kung, Patrick
    Kang, Chul
    Cho, Mann-Ho
    Kim, Seongsin M.
    2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2014,
  • [40] A 2.5 GHz low phase noise silicon germanium heterojunction bipolar transistor ring oscillator
    van Niekerk, Sarel Johannes Lodiwikus
    Sinha, Saurabh
    2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 2016, : 137 - 140
12345