Energetics and bias-dependent scanning tunneling microscopy images of Si ad-dimers on Ge(001)

被引：14

作者：

Khare, SV ^{[1
]}

Kulkarni, RV ^{[1
]}

Stroud, D ^{[1
]}

Wilkins, JW ^{[1
]}

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.60.4458

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an ab initio study of the energetics and scanning tunneling microscopy (STM) images of Si ad-dimers on Ge(001) and energetics of Ge ad-dimers on Si(001). As in the case of Si dimers on Si(001), we find for both systems that the D dimer configuration, lying between the substrate dimer rows and parallel to them, is highest in energy. Conversely, recent STM experiments for Si ad-dimers on Ge(001) deduce the D configuration to be most stable. Our theoretical STM images for this system find that both the D and C configurations (the latter also between the rows) have similar STM images for the experimental voltages. We propose an experimental test (low-bias STM imaging) which would unambiguously distinguish between the D and C configurations. [S0163-1829(99)04631-7].

引用

页码：4458 / 4461

页数：4

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