Modelling of Temperature Dependence on Current Collapse Phenomenon in AlGaN/GaN HEMT Devices

被引：0

作者：

Samudra, Ganesh S. ^{[1
]}

Liang, Yung C. ^{[1
]}

Li, Yuling ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

来源：

2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2013年

关键词：

ELECTRON-MOBILITY TRANSISTORS; MECHANISMS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the studies of the temperature dependence on the current collapse behaviours of AlGaN/GaN high electron mobility transistors (HEMTs). A physical-based model is proposed to analyse the trapping and de-trapping process along the surface with the effect of temperature included for the first time. The temperature-dependent gate leakage current is treated as the source for electron trapping and it can be predicted by the proposed model quantitatively. Then the relationship of the capture cross section of the surface trap on the electric field is investigated with respect to temperature variations. By applying the Poole-Frenkel emission mechanism, the dynamics of the trapped electrons at different temperatures are described in this model. The analytical results on current recovery time-constant are then verified by comparing with the laboratory measurement as well as the numerical results obtained from Sentaurus TCAD simulations.

引用

页码：139 / 142

页数：4

共 50 条

[31] Influence of Displacement Damage Effect on AlGaN/GaN HEMT Devices
Chen B.
Sun C.
Ma T.
Song H.
Wang J.
Peng C.
Zhang Z.
Lei Z.
Liang C.
Zhong X.
[J]. Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2023, 57 (12): : 2274 - 2280
[32] Compact Modeling of Intrinsic Capacitances in AlGaN/GaN HEMT Devices
Khandelwal, Sourabh
Fjeldly, Tor A.
[J]. NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 744 - 747
[33] Characterisation of AlGaN/GaN HEMT epitaxy and devices on composite substrates
Meneghesso, G.
Ongaro, C.
Zanoni, E.
Brylinski, C.
di Forte-Poisson, M. A.
Hoel, V.
de Jaeger, J. C.
Langer, R.
Lahreche, H.
Bove, P.
Thorpe, J.
[J]. 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 401 - +
[34] Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
Yoshida, S.
Sakaida, Y.
Asubar, J. T.
Tokuda, H.
Kuzuhara, M.
[J]. 2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2015,
[35] An insight to current collapse in GaN HEMT and suppressing techniques
Kharei, Pichingla
Baidya, Achinta
Maity, Niladri Pratap
Maity, Reshmi
[J]. ENGINEERING RESEARCH EXPRESS, 2023, 5 (01):
[36] Current Collapse, Memory Effect Free GaN HEMT
Wen, Cheng P.
Wang, Jinyan
Hao, Yilong
[J]. 2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 149 - 152
[37] SThM temperature mapping and nonlinear thermal resistance evolution with bias on AlGaN/GaN HEMT devices
Aubry, Raphael
Jacquet, Jean-Claude
Weaver, J.
Durand, Olivier
Dobson, P.
Mills, G.
di Forte-Poisson, Marie-Antoinette
Cassette, Simone
Delage, Sylvain-Laurent
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (03) : 385 - 390
[38] 0.25 μm AlGaN/GaN HEMT Nonlinearity Modelling and Characterization Over a Wide Temperature Range
Alim, Mohammad A.
Rezazadeh, Ali A.
Gaquiere, Christophe
Ali, Mayahsa M.
Haris, Norshakila
Kyabaggu, Peter B.
Zhang, Yongjian
[J]. 2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 140 - 143
[39] ACTIVE CURRENT MODELING FOR GAN HEMT DEVICES
Lim, Hong Y.
Ng, Geok I.
Leong, Yoke C.
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (03) : 694 - 697
[40] Bulk Temperature Impact on the AlGaN/GaN HEMT Forward Current on Si, Sapphire and Free-Standing GaN
Fontsere, A.
Perez-Tomas, A.
Placidi, M.
Baron, N.
Chenot, S.
Moreno, J. C.
Cordier, Y.
[J]. ECS SOLID STATE LETTERS, 2013, 2 (01) : P4 - P7

← 1 2 3 4 5 →