Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes

Carbon nanotube (CNT) ferroelectric field-effect transistors (FeFETs) with well-defined memory switch behaviors are promising for nonvolatile, nondestructive read-out (NDRO) memory operation and ultralow power consumption. Here, we report two-bit CNT-FeFET memories by assembling two top gates on individual nanotubes coated with ferroelectric thin films. Each bit of the nanotube transistor memory exhibits a controllable memory switching behavior induced by the reversible remnant polarization of the ferroelectric films, and its NDRO operation is demonstrated. The low driving voltage of 2 V, high carrier mobility over 1000 cm(2) V-1 s(-1), and potential ultrahigh integration density over 200 Gbit inch(-2) of the two-bit FeFET memory are highlighted in this paper.