Strongly modulated conductivity in a perovskite ferroelectric field-effect transistor

被引：7
|
作者：
Veselovskii, IA [1 ]
Grekhov, IV [1 ]
Delimova, LA [1 ]
Liniichuk, IA [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2001年 / 27卷 / 01期
关键词：
D O I：
10.1134/1.1345155
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An all-perovskite field-effect transistor with a (Pb0.95La0.05)(Zr0.2Ti0.8)O-3 gate insulator exhibits a strongly modulated room-temperature conductivity in a La1.94Sr0.06CuO4 channel. The channel conductivity is controlled by the hopping mechanism with variable jump length and determined by the Coulomb gap at the Fermi level. (C) 2001 MAIK "Nauka/Interperiodica".
引用
收藏
页码：17 / 19
页数：3
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