Extraction and Estimation of Pinned Photodiode Capacitance in CMOS Image Sensors

被引：21
|
作者：
Chao, Calvin Yi-Ping [1 ]
Chen, Yi-Che [1 ]
Chou, Kuo-Yu [1 ]
Sze, Jhy-Jyi [1 ]
Hsueh, Fu-Lung [1 ]
Wuu, Shou-Gwo [1 ]
机构：
[1] Taiwan Semicond Mfg Co, Hsinchu 30077, Taiwan
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2014年 / 2卷 / 04期
关键词：
Active pixel sensors (APS); CMOS image sensors (CIS); pinned photodiode (PPD); full well capacity (FWC); pinning voltage;
D O I：
10.1109/JEDS.2014.2318060
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The pinned photodiode capacitance extraction method proposed by Goiffon et al. is discussed, and two additional new methods are presented and analyzed; one based on the full well dependence on photon flux and the other based on the full well dependence on transfer-gate off-voltage.
引用
收藏
页码：59 / 64
页数：6
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