An Improved Model for the Full Well Capacity in Pinned Photodiode CMOS Image Sensors

被引：31
|
作者：
Cao, Chen, I [1 ]
Shen, Benlan [2 ]
Zhang, Bing [1 ]
Wu, Longsheng [1 ]
Wang, Junfeng [1 ]
机构：
[1] Inst Microelect Technol, Dept Integrated Circuit Design, Xian 710071, Peoples R China
[2] LUSTER Light Tech Corp, Dept Visual Device, Beijing 100195, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2015年 / 3卷 / 04期
关键词：
CMOS image sensors; full well capacity (FWC); pinned photodiode (PPD); analytical model;
D O I：
10.1109/JEDS.2015.2423233
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved analytical model for quantifying the full well capacity in pinned photodiode (PPD) CMOS image sensors is proposed. The model captures the characteristics of the realistic technology-induced vertical doping nonuniformity in photon sensing N-type area of the PPD structure and the voltage dependency of the PPD capacitance, respectively, both of which were neglected in the existing works. Excellent agreement between measured and predicted data shows that the proposed model fits a wider range of technology conditions for a wider spectra responding compared to the up-to-date reported model.
引用
收藏
页码：306 / 310
页数：5
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