Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts

Sub-100 nm multiple-gate In0.53Ga0.47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts were demonstrated. The self-aligned Ni-InGaAs contacts were formed by using a salicide-like metallization process, which involves a reaction between Ni and In0.53Ga0.47As and selective wet etching of unreacted Ni. Ni-InGaAs contacts formed on Si-doped n(++) In0.53Ga0.47As (5 x 10(19) cm(-3)) source/drain show low contact resistance R-C of 79 Omega . mu m and sheet resistance R-sh of 43 Omega/square. With self-aligned Ni-InGaAs contacts formed on n(++) In0.53Ga0.47As source and drain, the n-MOSFET exhibits low series resistance R-SD of 364 Omega . mu m, which is the lowest value reported for non-planar InGaAs MOSFETs to date. The multiple-gate n-MOSFET has a channel length of 50 nm and equivalent oxide thickness (EOT) of similar to 3 nm, and achieves a drive current of 411 mu A/mu m at V-D of 0.7 V and V-G of 0.7 V. The device also shows a peak extrinsic transconductance G(m) of 590 mu S/mu m at V-D of 0.5 V. (C) 2012 The Electrochemical Society. All rights reserved.