Impact of high-field charge transport on terahertz emission from semiconductor devices

被引：1

作者：

Acuna, Guillermo Pedro ^{[1
]}

Buersgens, Federico ^{[1
]}

Lane, Christian ^{[1
]}

Kerstine, Roland ^{[1
]}

机构：

[1] Univ Munich, Photon & Optoelectron Grp, D-80799 Munich, Germany

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2008年 / 14卷 / 02期

关键词：

millimeter wave generation; optical pulse generation and pulse compression; ultrafast processes; time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter;

D O I：

10.1109/JSTQE.2007.910983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an experimental study that provides insight into the charge carrier dynamics that lead to terahertz (THz) emission. We perform time-resolved THz experiments on semiinsulating GaAs structures with periodically poled surface electrodes. The individual charge carrier dynamics that contribute to the THz emission process are identified by their dependence on the applied field. Electron transport in inhomogeneous fields is found to dominate the emission of THz radiation. Other dynamics that become visible by their specific THz emission are the Dember effect, the intervalley transfer of electrons, and hole currents at high field strengths.

引用

页码：482 / 485

页数：4

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