Room-temperature compound semiconductor radiation detectors

被引：207
|
作者：
McGregor, DS [1 ]
Hermon, H [1 ]
机构：
[1] SANDIA NATL LABS, MS 9671, LIVERMORE, CA 94551 USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1997年 / 395卷 / 01期
关键词：
D O I：
10.1016/S0168-9002(97)00620-7
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A summary is presented of the present status of several compound semiconductor radiation detectors, including detectors fabricated from GaAs, HgI2, CdTe, Cd1-xZnxTe and PbI2.
引用
收藏
页码：101 / 124
页数：24
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