ROOM-TEMPERATURE GALLIUM-ARSENIDE RADIATION DETECTORS

被引：0

作者：

BAUSER, E ^{[1
]}

CHEN, J ^{[1
]}

GEPPERT, R ^{[1
]}

IRSIGLER, R ^{[1
]}

LAUXTERMANN, S ^{[1
]}

LUDWIG, J ^{[1
]}

KOHLER, M ^{[1
]}

ROGALLA, M ^{[1
]}

RUNGE, K ^{[1
]}

SCHAFER, F ^{[1
]}

SCHMID, T ^{[1
]}

SCHOCHLIN, A ^{[1
]}

WEBEL, M ^{[1
]}

机构：

[1] UNIV FREIBURG,FREIBURG,GERMANY

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Detectors for registration of ionizing elementary particles and X-ray radiation have been built based on the utilization of semi-insulating GaAs substrates. The commercially available LEC wafers have been processed to feature a Schottky contact at one side and an ohmic at the other. LPE GaAs detectors with 85 mu m thick epitaxy layers have been investigated, especially the detection and charge collection efficiency. Noise measurements for Various detector-preamplifier configurations have been performed.

引用

页码：355 / 360

页数：6

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