A very thin power amplifier multichip module for 1.9-GHz cellular phone systems

被引：3
|
作者：
Kagaya, O [1 ]
Sekine, K [1 ]
Yamashita, K [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 1999年 / 22卷 / 01期
关键词：
MCM-D technology; microwave power amplifier module; 1,9-GHz cellular phone system; planarization technology of passive components;
D O I：
10.1109/6040.746541
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A compact thin power amplifier module for 1.9-GHz cellular phone systems: has been incorporated using MCM-D technology and planarization technology of all passive components. The module consists of four Si-MOSFET'S and is 9.4 x 7.2 x 1 mm, resulting in a volume of 0.07 cc including its shield metallic; case, The module was designed with the, computer simulator, Libra, and simplified lumped-element equivalent circuits of passive 1 components. The fabricated module exhibited an output power of 33.3 dBm and power efficiency of 29%. These results suggest that these technologies will be:very useful for the miniaturization of circuit components for GHz-band mobile communications.
引用
收藏
页码：40 / 45
页数：6
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