A very thin power amplifier multichip module for 1.9-GHz cellular phone systems

被引：3

作者：

Kagaya, O ^{[1
]}

Sekine, K ^{[1
]}

Yamashita, K ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

IEEE TRANSACTIONS ON ADVANCED PACKAGING | 1999年 / 22卷 / 01期

关键词：

MCM-D technology; microwave power amplifier module; 1,9-GHz cellular phone system; planarization technology of passive components;

D O I：

10.1109/6040.746541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A compact thin power amplifier module for 1.9-GHz cellular phone systems: has been incorporated using MCM-D technology and planarization technology of all passive components. The module consists of four Si-MOSFET'S and is 9.4 x 7.2 x 1 mm, resulting in a volume of 0.07 cc including its shield metallic; case, The module was designed with the, computer simulator, Libra, and simplified lumped-element equivalent circuits of passive 1 components. The fabricated module exhibited an output power of 33.3 dBm and power efficiency of 29%. These results suggest that these technologies will be:very useful for the miniaturization of circuit components for GHz-band mobile communications.

引用

页码：40 / 45

页数：6

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