Preparation and optical characterisation of chemically deposited CuInSe2 thin films

被引：0
|
作者：
Dhanam, R
Jayakumar, S
Kannan, MD
机构：
[1] PSG Coll Technol, Dept Phys, Coimbatore 641004, Tamil Nadu, India
[2] Kongunadu Arts & Sci Coll, Dept Phys, Coimbatore 641029, Tamil Nadu, India
来源：
BULLETIN OF ELECTROCHEMISTRY | 1998年 / 14卷 / 11期
关键词：
thin films; CuInSe2; chemical deposition; characterization;
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Copper indium selenide films were prepared by chemical bath deposition technique at room temperature. The films were characterized by X-ray diffraction technique. Optical constants were determined in the range 500-1400 mm, The films possess a direct bandgap of 1.02 eV. Results are discussed In detail.
引用
收藏
页码：418 / 421
页数：4
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