Structural-phase State and Electrophysical Properties of Ru Thin Films

被引：0
|
作者：
Lohvynov, A. M. [1 ]
Kostenko, M. V. [1 ]
Cheshko, I. V. [1 ]
Protsenko, S. I. [1 ]
机构：
[1] Sumy State Univ, 2 Rymskogo Korsakova St, UA-40007 Sumy, Ukraine
来源：
INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2016年
关键词：
thin film; ruthenium; resistivity; size effect; phase state; ATOMIC LAYER DEPOSITION; RUTHENIUM;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The paper shows the results of the study structural-phase state and electrical properties of Ru nanocrystalline films. It was found that the film thickness and substrate temperature greatly affects on the crystal structure of these nanostructures. At thickness d < 50 nm films were quasi amorphous structure regardless of the substrate temperature with resistivity rho = (3-5).10(-4) Omega.m. With increasing thickness up to d > 50 nm and heating the substrate upon receipt of 600 K and subsequent annealing to 900 K formed polycrystalline hexagonal structure with an average crystallite size of 15 nm. Lattice parameters close to the table values for bulk samples and rho = (2-4).10(-6) Omega.m.
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页数：3
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