Structural-phase State and Electrophysical Properties of Ru Thin Films

被引：0

作者：

Lohvynov, A. M. ^{[1
]}

Kostenko, M. V. ^{[1
]}

Cheshko, I. V. ^{[1
]}

Protsenko, S. I. ^{[1
]}

机构：

[1] Sumy State Univ, 2 Rymskogo Korsakova St, UA-40007 Sumy, Ukraine

来源：

INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP) | 2016年

关键词：

thin film; ruthenium; resistivity; size effect; phase state; ATOMIC LAYER DEPOSITION; RUTHENIUM;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The paper shows the results of the study structural-phase state and electrical properties of Ru nanocrystalline films. It was found that the film thickness and substrate temperature greatly affects on the crystal structure of these nanostructures. At thickness d < 50 nm films were quasi amorphous structure regardless of the substrate temperature with resistivity rho = (3-5).10(-4) Omega.m. With increasing thickness up to d > 50 nm and heating the substrate upon receipt of 600 K and subsequent annealing to 900 K formed polycrystalline hexagonal structure with an average crystallite size of 15 nm. Lattice parameters close to the table values for bulk samples and rho = (2-4).10(-6) Omega.m.

引用

页数：3

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